2SD965 features low collector-emitter saturation voltage v ce(sat) satisfactory operation performances at high efficiency with the lowvoltage power supply. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 7v collector current i c 5a peak collector current i cp 8a collector power dissipation p c 0.75 w junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter voltage v ceo i c =1ma,i b =0 20 v emitter-base voltage v ebo i e =10a,i c =0 7 v collector-base cutoff current i cbo v cb =10v,i e =0 0.1 a collector-emitter cutoff current i ceo v ce =10v,i b =0 1 a emitter-base cutoff current i ebo v eb =7v,i c =0 0.1 a v ce =2v,i c = 0.5 a 230 600 v ce =2v,i c = 2a 150 collector-emitter saturation voltage v ce(sat) i c =3a,i b =0.1a 1 v collector output capacitance c ob v cb =20v,i e = 0, f = 1 mhz 50 pf transition frequency f t v cb =6v,i e = -50 ma, f = 200 mhz 150 mhz dc current gain h fe h fe classification marking q r h fe 230 380 340 600 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification 4008-318-123
|
